Yes, this would be P type. Boron is usually the P type dopant of choice. I’m not sure what role they have in mind for this, but probably to replace polysilicon and metals as conductors. What you have to watch out for is that this will make diodes wherever it bumps up against n-type material. This is a problem for metals as well, because you can get accidental schottky junctions, and we usually solve it with degenerate doping under the contract. I’m not sure what a junction with this material would do though.
I want to note that in what has become the largest (by mass) application of semiconductors, silicon PV cells, boron has been replaced by gallium as the P type dopant of choice. Boron suffers from an annoying form of light-induced efficiency degradation that gallium avoids.
